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Function mechanism of Y 2 O 3 additive in silicon powder nitridation
Author(s) -
Jin Xing,
Xing Pengfei,
Zhuang Yanxin,
Kong Jian,
Jiang Shengnan,
Wei Donghui
Publication year - 2019
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/ijac.13207
Subject(s) - nitriding , materials science , silicon , x ray photoelectron spectroscopy , differential thermal analysis , scanning electron microscope , analytical chemistry (journal) , gravimetry , diffraction , chemical engineering , crystallography , nanotechnology , metallurgy , composite material , layer (electronics) , chemistry , optics , organic chemistry , physics , interferometry , engineering
Abstract Effect of sole Y 2 O 3 additive on the nitridation behavior of silicon powder was systematically studied using thermo gravimetry, differential thermal analysis, particle size analysis, X‐ray diffraction analysis, X‐ray photoelectron spectroscopy, scanning electron microscope and thermodynamic analysis in this paper. The thermo gravimetry results showed that Y 2 O 3 additive can significantly decrease the initial nitriding temperature and increase the nitriding rate. This phenomenon can be attributed to the much lower reaction temperature of the silica film and Y 2 O 3 additive than that of the silica film and silicon. In addition, Y 2 O 3 additive has little effect on the nitridation of silicon powder at 1300°C. However, it can obviously enhance the nitridation of silicon powder and the formation of β‐Si 3 N 4 at 1400°C, which is evidenced by the fact that the overall conversion increases from 58.1% to 100% and the fraction of β‐Si 3 N 4 in generated Si 3 N 4 increases from 7.9% to 68.2% with increasing the content of Y 2 O 3 additive from 0 to 10 wt%.