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Assembly of β‐SiC Nanowires film and humidity sensing performance
Author(s) -
Shen Xiulin,
Liu Haitao,
Liu Silin,
Huang Zhaohui,
Liu Yangai,
Fang Minghao,
Wu Xiaowen,
Min Xin
Publication year - 2018
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/ijac.13132
Subject(s) - materials science , nanowire , semiconductor , chemical vapor deposition , nanotechnology , humidity , electronics , optoelectronics , microstructure , photoelectric effect , silicon , composite material , electrical engineering , physics , engineering , thermodynamics
β‐SiC materials have been seen as the third‐generation semiconductor widely used in kinds of photoelectric device, high temperature electronics, and other fields. Compared with ordinary semiconductors, β‐SiC materials have huge potential application in replacing monocrystalline silicon in extreme environments because of their numerals extraordinary chemical and physical properties. Based on this, β‐SiC nanowires obviously are more desirable in any way. Here, we present a modified chemical vapor deposition (CVD) method to synthesis β‐SiC nanowires, which needs no protect gas, and transfer it to Si/SiO 2 substrates equipped with Au electrodes. The microstructure of the as‐prepared samples is tested by field emission scanning electron microscopy (FESEM). The humidity sensing performance of electronic device is measured by electrochemical workstation test equipment. It shows that the resistance of β‐SiC nanowires increases with increasing environment humidity within very short response/recovery time‐0.5 seconds/0.5 seconds and also performs excellent cycling stability. Such advantage superiorities make it highly possible to apply β‐SiC nanowires into various environments.