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Electrically conductive SiC ceramics processed by pressureless sintering
Author(s) -
Kim YongHyeon,
Kim YoungWook,
Kim Kwang Joo
Publication year - 2018
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/ijac.13131
Subject(s) - materials science , sintering , ceramic , electrical resistivity and conductivity , crystallite , composite material , doping , grain size , grain growth , phase (matter) , metallurgy , optoelectronics , electrical engineering , chemistry , organic chemistry , engineering
Polycrystalline SiC ceramics with 10 vol% Y 2 O 3 ‐AlN additives were sintered without any applied pressure at temperatures of 1900‐2050°C in nitrogen. The electrical resistivity of the resulting SiC ceramics decreased from 6.5 × 10 1 to 1.9 × 10 −2 Ω·cm as the sintering temperature increased from 1900 to 2050°C. The average grain size increased from 0.68 to 2.34 μm with increase in sintering temperature. A decrease in the electrical resistivity with increasing sintering temperature was attributed to the grain‐growth‐induced N‐doping in the SiC grains, which is supported by the enhanced carrier density. The electrical conductivity of the SiC ceramic sintered at 2050°C was ~53 Ω −1 ·cm −1 at room temperature. This ceramic achieved the highest electrical conductivity among pressureless liquid‐phase sintered SiC ceramics.