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Effects of interface bonding properties on cyclic tensile behavior of unidirectional C/Si 3 N 4 and SiC/Si 3 N 4 composites
Author(s) -
Li Longbiao,
Reynaud Pascal,
Fantozzi Gilbert
Publication year - 2018
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/ijac.12894
Subject(s) - materials science , composite material , ultimate tensile strength , composite number , hysteresis , ceramic matrix composite , fiber , ceramic , stress (linguistics) , condensed matter physics , linguistics , philosophy , physics
In this paper, the effect of fiber/matrix interface bonding properties on the cyclic loading/unloading tensile stress−strain hysteresis loops of 2 different ceramic‐matrix composites ( CMC s), ie, C/Si 3 N 4 and SiC/Si 3 N 4 , has been investigated using micromechanical approach. The relationships between the damage mechanisms (ie, matrix multicracking saturation, fiber/matrix interface debonding and fibers failure), hysteresis dissipated energy and internal frictional damage parameter have been established. The damage evolution processes under cyclic loading/unloading tensile of C/Si 3 N 4 and SiC/Si 3 N 4 composites corresponding to different fiber/matrix interface bonding properties have been analyzed through damage models and interface frictional damage parameter. For the C/Si 3 N 4 composite with the weakest fiber/matrix interface bonding, the composite possesses the lowest tensile strength and the highest failure strain; the hysteresis dissipated energy increases at low peak stress, and the stress−strain hysteresis loops correspond to the interface partially and completely debonding. However, for the SiC/Si 3 N 4 composite with weak interface bonding, the composite possesses the highest tensile strength and intermediate failure strain; and the hysteresis dissipated energy increases faster and approaches to a higher value than that of composite with the strong interface bonding.
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