High temperature oxidation resistance of Ti 3 SiC 2 in air and low oxygen atmosphere

The oxidation resistance of high‐purity and dense Ti 3 SiC 2 bulk ceramic which was prepared by hot‐pressing was investigated at 700‐1200°C for 5‐40 hours in air and low oxygen atmosphere, respectively. After oxidation, the mass gain curves of Ti 3 SiC 2 were obtained, and the oxide layer was analyzed qualitatively and quantitatively. The results showed that the oxide layer was mainly TiO 2 and SiO 2 mixture below 1100°C in air. When the oxidation temperature reached 1100°C and above, the oxidation proceeded rapidly, and the mass gain curves followed the parabolic law. The oxide layer changed from single‐layer to double‐layer structure, which comprised of an inner layer of TiO 2 with SiO 2 solid solution and an outer layer of TiO 2 . In low oxygen atmosphere, the oxidation was fainter than that in air. But the double‐layer structure would also occur. These two oxide layers could protect the substrate to be further oxidized. In summary, Ti 3 SiC 2 bulk materials possess good high temperature oxidation resistance both in air and low oxygen atmosphere below 1100°C.