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Thermoelectric transport properties of Sn 1− x Ge x Se ( x =0‐0.03) prepared by melting synthesis method
Author(s) -
Gao Junling,
Shao Ziming,
Xu Guiying
Publication year - 2017
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/ijac.12709
Subject(s) - materials science , thermoelectric effect , seebeck coefficient , electrical resistivity and conductivity , analytical chemistry (journal) , thermoelectric materials , microstructure , thermal conductivity , hall effect , melting temperature , atmospheric temperature range , metallurgy , thermodynamics , composite material , chemistry , physics , chromatography , electrical engineering , engineering
Abstract P ‐type Sn 1− x Ge x Se ( x =0‐0.03) polycrystals were prepared through direct melting synthesis method. The composition and microstructure of the samples were analyzed, and the thermoelectric transport properties were investigated in temperatures ranging from 303 to 773 K. The results indicate that the electrical conductivity decreases as Ge content increases. A significant improvement was found for the Seebeck coefficient. The maximal value of 647 μV/K was achieved at 473 K for the sample of Sn 0.97 Ge 0.03 Se. The Hall transport properties result indicates that the carrier concentration decreases with Ge content increasing at room temperature. In addition, the total thermal conductivities (κ tot ) of all samples decrease with rising temperature.