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Nitridation behavior of silicon powder compacts of various thicknesses with Y 2 O 3 and MgO as sintering additives
Author(s) -
Matsunaga Chika,
Zhou You,
Kusano Dai,
Hyuga Hideki,
Hirao Kiyoshi
Publication year - 2017
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/ijac.12704
Subject(s) - nitriding , materials science , sintering , microstructure , metallurgy , silicon , phase (matter) , doping , composite material , layer (electronics) , optoelectronics , chemistry , organic chemistry
The effects of the nitriding temperature (1300 and 1350°C), holding time (0‐4 hours), and thickness of Si powder compacts on the nitridation behavior of silicon were investigated by examining the nitridation rates, analyzing phase compositions, and observing the microstructures of nitrided compacts. Si powder compacts doped with Y 2 O 3 and MgO as sintering additives were prepared with thicknesses of 3, 6, and 9 mm. The phases of nitrided compacts were transformed from Si to α‐Si 3 N 4 and β‐Si 3 N 4 with an increase in the nitriding temperature and holding time. The degree of nitridation increased with the nitriding temperature and holding time. The β/(α+β) ratio increased with the nitriding temperature and holding time, and with a decrease in the thickness of the Si powder compacts. However, all compacts exhibited the same tendency for a higher β/(α+β) ratio at the compact surface than in the bulk of the compact. The variation in the β/(α+β) ratio for each compact decreased with an increase in the nitriding temperature and holding time.