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Electrical Properties of Sr 1– x B i x Fe 0.6 Sn 0.4 O 3 Thermistor Ceramics
Author(s) -
Yuan Changlai,
Yang Tao,
Chen Guohua,
Zhou Changrong,
Yang Yun,
Zhou Xiujuan
Publication year - 2015
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/ijac.12401
Subject(s) - thermistor , materials science , ceramic , electrical resistivity and conductivity , activation energy , grain size , grain boundary , analytical chemistry (journal) , mineralogy , microstructure , composite material , chemistry , electrical engineering , engineering , chromatography
Bi x Sr 1− x F e 0.6 Sn 0.4 O 3 (0.2 ≤ x ≤ 0.6) thermistor ceramics were prepared by conventional solid‐state reaction method. The Bi substitution affected the crystalline structure and induced the decrease of lattice parameters a , b, and c in Bi x Sr 1− x F e 0.6 Sn 0.4 O 3 ceramics, except for x = 0.6. The values of room‐temperature resistivity, thermistor constant, and activation energy of Bi x Sr 1− x F e 0.6 Sn 0.4 O 3 ceramics were 7.05–6790 kΩ.cm, 4375–6694 K, and 0.378–0.578 eV, respectively. Electrical microstructural analysis indicated that in ceramic surface layers, grain boundaries, and grain cores of the thermistor ceramics, Ohmic behavior was the main conductive mechanism and space‐charge effect was dominant in grain shells.