Effects of A ‐Site S m Substitution and Textured Structure on Electric Properties of C a B i 2 N b 2 O 9 ‐Based High‐Curie‐Temperature Ceramics

C a B i 2 N b 2 O 9 ceramic is a promising candidate for high‐temperature piezoelectric applications due to its high C urie temperature. However, extremely low piezoelectric properties hinder its application. A combination of S m 3+ donor doping and texturing was applied to address this problem. Piezoelectric coefficient, T c , and resistivity of textured C a 0.95 S m 0.05 B i 2 N b 2 O 9 ceramics ( d 33   =   23pC/N, T c  = 941°C, ρ  = 4.1 × 10 5 Ω cm at 600°C) were obviously higher than those of pure random C a B i 2 N b 2 O 9 ceramics ( d 33   =   6, T c  = 930°C, ρ =0.6 × 10 5 Ω cm at 600°C). Furthermore, it had excellent resistance to depolarization property, with k p of about 5.9% until 600°C.