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Effects of A ‐Site S m Substitution and Textured Structure on Electric Properties of C a B i 2 N b 2 O 9 ‐Based High‐Curie‐Temperature Ceramics
Author(s) -
Chen Huanbei,
Guo Xiangxin,
Cui Zhonghui,
Zhai Jiwei
Publication year - 2013
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/ijac.12082
Subject(s) - materials science , ceramic , electrical resistivity and conductivity , doping , piezoelectricity , analytical chemistry (journal) , mineralogy , crystallography , composite material , chemistry , physics , optoelectronics , chromatography , quantum mechanics
C a B i 2 N b 2 O 9 ceramic is a promising candidate for high‐temperature piezoelectric applications due to its high C urie temperature. However, extremely low piezoelectric properties hinder its application. A combination of S m 3+ donor doping and texturing was applied to address this problem. Piezoelectric coefficient, T c , and resistivity of textured C a 0.95 S m 0.05 B i 2 N b 2 O 9 ceramics ( d 33 = 23pC/N, T c = 941°C, ρ = 4.1 × 10 5 Ω cm at 600°C) were obviously higher than those of pure random C a B i 2 N b 2 O 9 ceramics ( d 33 = 6, T c = 930°C, ρ =0.6 × 10 5 Ω cm at 600°C). Furthermore, it had excellent resistance to depolarization property, with k p of about 5.9% until 600°C.