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Characterization and Piezoelectric Properties of Reactively Sputtered ( S c, A l) N Thin Films on Diamond Structure
Author(s) -
Wu Sean,
Wu Meng Ying,
Huang JowLay,
Lii DingFwu
Publication year - 2013
Publication title -
international journal of applied ceramic technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.4
H-Index - 57
eISSN - 1744-7402
pISSN - 1546-542X
DOI - 10.1111/ijac.12068
Subject(s) - materials science , scandium , wurtzite crystal structure , piezoelectricity , diamond , thin film , annealing (glass) , piezoelectric coefficient , sputtering , nitride , aluminium , analytical chemistry (journal) , composite material , metallurgy , nanotechnology , layer (electronics) , chemistry , chromatography , zinc
Highly oriented wurtzite ( S c, A l) N films were deposited on a diamond/silicon by a co‐sputtering system. The results showed that the formation of S c x A l 1− x N alloys causes a lattice distortion during the phase transition, and this intermediate phase induces a large piezoelectric response. When the scandium concentration increased up to the solution limit of scandium in aluminum nitride (measured data are about 12 at.%), the piezoelectric coefficient of ( S c, A l) N film is four times larger than pure A l N layer. After annealing process, the d 33 value of ( S c, A l) N can be increased to a maximum of 20.073 p C / N .
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