
A novel single‐cell method provides direct evidence of persistent DNA damage in senescent cells and aged mammalian tissues
Author(s) -
Galbiati Alessandro,
Beauséjour Christian,
d'Adda di Fagagna Fabrizio
Publication year - 2017
Publication title -
aging cell
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.103
H-Index - 140
eISSN - 1474-9726
pISSN - 1474-9718
DOI - 10.1111/acel.12573
Subject(s) - biology , dna damage , dna , computational biology , microbiology and biotechnology , cell , genetics
Summary The DNA damage response ( DDR ) arrests cell cycle progression until DNA lesions, like DNA double‐strand breaks ( DSB s), are repaired. The presence of DSB s in cells is usually detected by indirect techniques that rely on the accumulation of proteins at DSB s, as part of the DDR . Such detection may be biased, as some factors and their modifications may not reflect physical DNA damage. The dependency on DDR markers of DSB detection tools has left questions unanswered. In particular, it is known that senescent cells display persistent DDR foci, that we and others have proposed to be persistent DSB s, resistant to endogenous DNA repair activities. Others have proposed that these peculiar DDR foci might not be sites of damaged DNA per se but instead stable chromatin modifications, termed DNA ‐ SCARS . Here, we developed a method, named ‘ DNA damage in situ ligation followed by proximity ligation assay’ ( DI ‐ PLA ) for the detection and imaging of DSB s in cells. DI ‐ PLA is based on the capture of free DNA ends in fixed cells in situ , by ligation to biotinylated double‐stranded DNA oligonucleotides, which are next recognized by antibiotin anti‐bodies. Detection is enhanced by PLA with a partner DDR marker at the DSB . We validated DI ‐ PLA by demonstrating its ability to detect DSB s induced by various genotoxic insults in cultured cells and tissues. Most importantly, by DI ‐ PLA , we demonstrated that both senescent cells in culture and tissues from aged mammals retain true unrepaired DSB s associated with DDR markers.