Effect of nitrogen doping concentration on 4H‐SiC laser slicing

Abstract Laser‐slicing technology represents a method of slicing silicon carbide (SiC) wafers that allows for no kerf loss and low stress. Employing a combined approach of experimental and two‐temperature model analysis, the impact of various doping concentrations on the laser slicing of n‐type 4H‐SiC was investigated, with the objective of broadening the processing window and enhancing the efficiency and quality of laser slicing. The effects of doping on laser absorption characteristics, crack propagation, peeling strength, and surface roughness of the peeled surfaces was investigated. The results indicated that an increase in nitrogen doping concentration leads to a decrease in resistivity and an increase in laser absorption, which in turn affects crack propagation length and modified line width. High‐quality laser slicing of SiC wafers with five gradient doping concentrations was successfully achieved by optimizing the processing parameters. Finally, an n‐type 4H‐SiC wafer with a diameter of 200 mm and a thickness of 386.18 µm was successfully sliced.