Open AccessOnline Junction Temperature Monitoring Using Intelligent Gate Drive for SiC Power Devices
Author(s) -
Zheyu Zhang,
Jacob Dyer,
Xuanlyu Wu,
Fei Wang,
Daniel Costinett,
Leon M. Tolbert,
Benjamin J. Blalock
Publication year - 2018
Publication title -
ieee transactions on power electronics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 2.159
H-Index - 266
eISSN - 1941-0107
pISSN - 0885-8993
DOI - 10.1109/tpel.2018.2879511
Subject(s) - junction temperature , electrical engineering , silicon carbide , power (physics) , materials science , power semiconductor device , temperature measurement , logic gate , gate driver , power module , electronic engineering , automotive engineering , optoelectronics , engineering , voltage , physics , quantum mechanics , metallurgy
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