Open AccessOnline Junction Temperature Monitoring Using Intelligent Gate Drive for SiC Power Devices
Author(s) -
Zheyu Zhang,
Jacob Dyer,
Xuanlyu Wu,
Fei Wang,
Daniel Costinett,
Leon M. Tolbert,
Benjamin J. Blalock
Publication year - 2019
Publication title -
ieee transactions on power electronics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 2.159
H-Index - 266
eISSN - 1941-0107
pISSN - 0885-8993
DOI - 10.1109/tpel.2018.2879511
Subject(s) - junction temperature , silicon carbide , electrical engineering , inverter , converters , power (physics) , computer science , electronic circuit , materials science , engineering , physics , quantum mechanics , voltage , metallurgy