Open AccessShort-Circuit Characterization and Protection of 10-kV SiC <sc>mosfet</sc>
Author(s) -
Shiqi Ji,
Marko Laitinen,
Xingxuan Huang,
Jingjing Sun,
William Giewont,
Fei Wang,
Leon M. Tolbert
Publication year - 2018
Publication title -
ieee transactions on power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.159
H-Index - 266
eISSN - 1941-0107
pISSN - 0885-8993
DOI - 10.1109/tpel.2018.2834463
Subject(s) - electrical engineering , mosfet , voltage , junction temperature , silicon carbide , saturation current , materials science , topology (electrical circuits) , electronic circuit , computer science , optoelectronics , engineering , physics , thermal , transistor , meteorology , metallurgy
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