Open AccessA Family of High-Frequency Single-Switch DC–DC Converters With Low Switch Voltage Stress Based on Impedance Networks
Author(s) -
Kyung-Hwan Lee,
Euihoon Chung,
Yongsu Han,
Jung-Ik Ha
Publication year - 2017
Publication title -
ieee transactions on power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.159
H-Index - 266
eISSN - 1941-0107
pISSN - 0885-8993
DOI - 10.1109/tpel.2016.2580154
Subject(s) - power, energy and industry applications , aerospace , communication, networking and broadcast technologies , components, circuits, devices and systems , computing and processing , engineered materials, dielectrics and plasmas , fields, waves and electromagnetics , general topics for engineers , nuclear engineering , signal processing and analysis , transportation
This paper presents a novel family of single-switch resonant dc-dc converters with low switch voltage stress. The single-switch resonant converter which has a ground-referenced switch is advantageous for implementing the gate drive circuit and operating at several-MHz switching frequency. However, the conventional ones mostly have high voltage stress on the switch, roughly 4-5 times the input voltage. In this paper, we propose the single-switch converter topologies derived from the drain-source impedance networks consisting of two inductors and two capacitors. The switch voltage of the proposed converters is shaped into a near trapezoid by designing the resonant networks to have the desired drain-source impedance. Furthermore, a simple and specific design scheme is presented here so that the peak switch voltage is lowered to 2.2-2.5 times the input voltage while zero voltage switching is achieved. Experimental results from a 20-W GaN-based prototype operating at 10 MHz demonstrate the feasibility of the proposed converter topologies and the design method.