Open AccessComparison of High Energy X-Ray and Cobalt-60 Irradiations on MOS Capacitors
Author(s) -
Vincent Girones,
Jerome Boch,
Frederic Saigne,
Alain Carapelle,
Arnaud Chapon,
Tadec Maraine,
Ruben Garcia Alia
Publication year - 2024
Publication title -
ieee transactions on nuclear science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.537
H-Index - 122
eISSN - 1558-1578
pISSN - 0018-9499
DOI - 10.1109/tns.2024.3366432
Subject(s) - nuclear engineering , bioengineering
The use of a high energy X-ray generator for Total Ionizing Dose (TID) testing is studied on metal-oxide semiconductor (MOS) capacitors. Several conditions were studied for the high energy X-ray irradiations (with aluminum and lead filters) and the experimental results are compared to Cobalt 60 (Co-60) irradiations. The effects of both annealing and package lid are also studied. All of the results are presented and discussed. It is shown that the simple BEOL stack (only one thin aluminum layer) has no effect on dose deposition in the oxide of MOS capacitors.