Open AccessA Radiation-Hardened Dual-Direction SCR Based on LDMOS for ESD Protection in the Extreme Radiation Environment
Author(s) -
Ming Wu,
Chenchen Zhang,
Wei Peng,
Jun Xu,
Hu Jin,
Yun Zeng,
Zhuojun Chen
Publication year - 2020
Publication title -
ieee transactions on nuclear science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.537
H-Index - 122
eISSN - 1558-1578
pISSN - 0018-9499
DOI - 10.1109/tns.2020.2978766
Subject(s) - nuclear engineering , bioengineering
To mitigate the total ionizing dose (TID) effects of the dual-direction silicon-controlled rectifier, based on laterally diffused metal-oxide-semiconductor (LDMOS-DDSCR), a common-centroid layout arrangement with multiple octagonal units is proposed and fabricated in an 18-V Bipolar-CMOS-DMOS process. The symmetrical characteristics of the bidirectional electrostatic discharge (ESD) protection are verified by transmission line pulse tests. Gamma-ray irradiation experiments demonstrate that the proposed device is tolerant of TID effects up to 100 krad(Si), whereas the traditional finger-type LDMOS-DDSCR loses its function at 50 krad(Si). Finally, the ESD performance is also characterized at high temperatures which confirms that the proposed device is an excellent candidate for space applications.