Open AccessInvestigation of Single-Event Transients in AlGaN/GaN MIS-Gate HEMTs Using a Focused X-Ray Beam
Author(s) -
Ani Khachatrian,
Nicolas J.-H. Roche,
S. Büchner,
Andrew D. Koehler,
Travis J. Anderson,
Dale McMorrow,
S. D. LaLumondiere,
Jeremy P. Bonsall,
E. C. Dillingham,
Dale Brewe
Publication year - 2018
Publication title -
ieee transactions on nuclear science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.537
H-Index - 122
eISSN - 1558-1578
pISSN - 0018-9499
DOI - 10.1109/tns.2018.2885824
Subject(s) - optoelectronics , materials science , high electron mobility transistor , transistor , electron , semiconductor , mosfet , physics , voltage , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom