Open Access30-nm Contacted Gate Pitch Back-Gate Carbon Nanotube FETs for Sub-3-nm Nodes
Author(s) -
Tathagata Srimani,
Gage Hills,
Mindy D. Bishop,
Max M. Shulaker
Publication year - 2018
Publication title -
ieee transactions on nanotechnology
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.574
H-Index - 82
eISSN - 1941-0085
pISSN - 1536-125X
DOI - 10.1109/tnano.2018.2888640
Subject(s) - very large scale integration , gate equivalent , logic gate , electronic circuit , node (physics) , and gate , field effect transistor , electrical engineering , transistor , materials science , optoelectronics , nand gate , digital electronics , integrated circuit , metal gate , electronic engineering , computer science , gate oxide , engineering , voltage , structural engineering
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