Open AccessDiscrete-Pulsed Current Time Method to Estimate Channel Thermal Resistance of GaN-Based Power Devices
Author(s) -
Zheng Xu,
Saptarshi Mandal,
Jianyi Gao,
Harshad Surdi,
Wenwen Li,
Yuya Yamaoka,
Guanxi Piao,
Toshiya Tabuchi,
Haoran Li,
Kou Matsumoto,
Srabanti Chowdhury
Publication year - 2018
Publication title -
ieee transactions on electron devices
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.828
H-Index - 186
eISSN - 1557-9646
pISSN - 0018-9383
DOI - 10.1109/ted.2018.2875077
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
A simple electrical method to extract device channel thermal resistance in transistors is presented here. The method compares the dc to discrete-pulsed characteristics and estimates the effective increase in channel temperature under dc biasing conditions. Using the discrete-pulsed $I$ versus $t$ method, the self-heating of the device is effectively eliminated, which helps avoiding the underestimation of the device channel thermal resistance, therefore, making it possible to perform thermal measurements at the high power operation. This technique was applied to lateral GaN HEMTs with three different substrates as well as vertical GaN current aperture vertical electron transistor (CAVET) on sapphire, which proved its sensitivity and validity for different device structures and geometries.