Open AccessResistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices
Author(s) -
Alessandro Bricalli,
Elia Ambrosi,
Mario Laudato,
Marcos Maestro,
Rosana Rodriguez,
Daniele Ielmini
Publication year - 2017
Publication title -
ieee transactions on electron devices
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.828
H-Index - 186
eISSN - 1557-9646
pISSN - 0018-9383
DOI - 10.1109/ted.2017.2777986
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
Resistive switching memory (RRAM) is among the most mature technologies for next generation storage class memory with low power, high density, and improved performance. The biggest challenge toward industrialization of RRAM is the large variability and noise issues, causing distribution broadening which affects retention even at room temperature. Noise and variability can be addressed by enlarging the resistance window between low-resistance state and high-resistance state, which requires a proper engineering of device materials and electrodes. This paper presents an RRAM device technology based on silicon oxide (SiOx), showing high resistance window thanks to the high bandgap in the silicon oxide. Endurance, retention, and variability show excellent performance, thus supporting SiOx as a strong active material for developing future generation RRAMs.