Open AccessExploring the Influence of Variability on Single-Electron Transistors Into SET-Based Circuits
Author(s) -
Esteve Amat,
Joan Bausells,
Francesc Perez-Murano
Publication year - 2017
Publication title -
ieee transactions on electron devices
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.828
H-Index - 186
eISSN - 1557-9646
pISSN - 0018-9383
DOI - 10.1109/ted.2017.2765003
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
We analyze the performance of hybrid single-electron transistor (SET)-FET circuits when different variability sources are considered, e.g., SET's quantum dot location and FET device dimension variations. For the FET device, FinFET and vertical nanowire configurations have been studied. The hybrid SET-FET circuits with both SET and FET in vertical topology depict the best circuit performance and the highest integration level. The variability impact on different SET-based circuits has been analyzed, including negative differential resistance and logic inverters.