Open AccessTwo-Port-Network-Based Method to Measure Electrical Characteristics of MIS Devices With Ultrathin Barriers
Author(s) -
Rene Berktold,
Jochen Mannhart
Publication year - 2017
Publication title -
ieee transactions on electron devices
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.828
H-Index - 186
eISSN - 1557-9646
pISSN - 0018-9383
DOI - 10.1109/ted.2017.2696532
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
MISFETs with ultrathin gate insulator layers are often used as switches in highly integrated circuits. For such transistors, gate currents can be problematic. For devices with nonnegligible channel resistance, such as oxide FETs, gate leakage currents also cause difficulties in measuring the devices' capacitance-voltage (CV) characteristics. Here, we present a method to measure CV characteristics of MIS devices that is also applicable to devices with sizable channel resistances and large leakage currents.