Open AccessIonic Metal–Oxide TFTs for Integrated Switching Applications
Author(s) -
Michael L. Schuette,
Andrew J. Green,
Kevin Leedy,
Antonio Crespo,
Stephen E. Tetlak,
Karynn A. Sutherlin,
Gregg H. Jessen
Publication year - 2016
Publication title -
ieee transactions on electron devices
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.828
H-Index - 186
eISSN - 1557-9646
pISSN - 0018-9383
DOI - 10.1109/ted.2016.2544200
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
Disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) show promise for a variety of dc and RF switching applications, especially those that can leverage their low-temperature, substrate-agnostic process integration potential. In this paper, enhancement-mode zinc-oxide TFTs were fabricated and their switching performance evaluated. These TFTs exhibit the drain-current density of 0.6 A/mm and minimal frequency dispersion, as evidenced by dynamic current–voltage tests. A high-frequency power switch figure of merit $R_{{\mathrm{\scriptscriptstyle ON}}}Q_{G}$ of 359 $\text{m}\Omega \,\cdot \, $ nC was experimentally determined for 0.75- $\mu \text{m}$ long-channel devices, and through scaling 45.9 $\text{m}\Omega \,\cdot \, $ nC is achievable for 11 V-rated devices (where $R_{\mathrm{\scriptscriptstyle ON}}$ is ON-state drain–source resistance, and $Q_{G}$ is gate charge). An RF switch cutoff frequency $f_{c}$ of 25 GHz was measured for the same 0.75- $\mu \text{m}$ TFT, whereas $f_{c}$ exceeding 500 GHz and power handling in the tens of watts are projected with optimization.