Cross-Point Resistive RAM Based on Field-Assisted Superlinear Threshold Selector | Zendy

Sung Hyun Jo | Zendy; Tanmay Kumar | Zendy; Sundar Narayanan | Zendy; Hagop Nazarian | Zendy

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Cross-Point Resistive RAM Based on Field-Assisted Superlinear Threshold Selector

Author(s) -

Sung Hyun Jo,

Tanmay Kumar,

Sundar Narayanan,

Hagop Nazarian

Publication year - 2015

Publication title -

ieee transactions on electron devices

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.828

H-Index - 186

eISSN - 1557-9646

pISSN - 0018-9383

DOI - 10.1109/ted.2015.2426717

Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas

We report a 3-D-stackable 1S1R passive cross-point resistive random access memory (RRAM). The sneak (leakage) current challenge in the cross-point RRAM integration has been overcome utilizing a field-assisted superlinear threshold selector. The selector offers high selectivity of >10⁷, sharp switching slope of <;5 mV/decade, ability to tune the threshold voltage, stable operation at 125°C, and endurance of >10¹¹. Furthermore, we demonstrate 1S1R integration in which the selector-subthreshold current is <;10 pA while offering >10² memory ON/OFF ratio and >10⁶ selectivity during cycling. Combined with self-current-controlled RRAM, the 1S1R enables high-density and high-performance memory applications.

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