Open AccessCross-Point Resistive RAM Based on Field-Assisted Superlinear Threshold Selector
Author(s) -
Sung Hyun Jo,
Tanmay Kumar,
Sundar Narayanan,
Hagop Nazarian
Publication year - 2015
Publication title -
ieee transactions on electron devices
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.828
H-Index - 186
eISSN - 1557-9646
pISSN - 0018-9383
DOI - 10.1109/ted.2015.2426717
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
We report a 3-D-stackable 1S1R passive cross-point resistive random access memory (RRAM). The sneak (leakage) current challenge in the cross-point RRAM integration has been overcome utilizing a field-assisted superlinear threshold selector. The selector offers high selectivity of >107, sharp switching slope of <;5 mV/decade, ability to tune the threshold voltage, stable operation at 125°C, and endurance of >1011. Furthermore, we demonstrate 1S1R integration in which the selector-subthreshold current is <;10 pA while offering >102 memory ON/OFF ratio and >106 selectivity during cycling. Combined with self-current-controlled RRAM, the 1S1R enables high-density and high-performance memory applications.