Open AccessAnalysis of Reduction in Lag Phenomena and Current Collapse in Field-Plate AlGaN/GaN HEMTs With High Acceptor Density in a Buffer Layer
Author(s) -
Yasunori Saito,
Ryuhei Tsurumaki,
Naohiro Noda,
Kazushige Horio
Publication year - 2018
Publication title -
ieee transactions on device and materials reliability
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.384
H-Index - 70
eISSN - 1558-2574
pISSN - 1530-4388
DOI - 10.1109/tdmr.2017.2779429
Subject(s) - engineered materials, dielectrics and plasmas , components, circuits, devices and systems , power, energy and industry applications
We make a 2-D transient analysis of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where only a deep acceptor above the midgap is considered. The deep-acceptor density is varied between 1017 cm-3and 8 × 10-17 cm-3. It is studied how the deep-acceptor density and the field plate affect the buffer-related drain lag and gate lag, and current collapse. It is shown that the lags and current collapse are reduced by introducing a field plate. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. It is also shown that without a field plate, the drain lag and current collapse increase with increasing the deep-acceptor density as expected, although the gate lag decreases when the deep-acceptor density becomes high in the region between 2 × 1017 cm-3 and 8 × 1017 cm-3. On the other hand, with a field plate, surprisingly, the lags and current collapse decrease when the deep-acceptor density becomes high. This is attributed to the fact that the reduction in drain lag and current collapse by introducing a field plate becomes more significant when the deep-acceptor density becomes higher.