Transistor reliability after radiation exposure | Zendy

L.B. Gardner | Zendy

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Transistor reliability after radiation exposure

Author(s) -

L.B. Gardner

Publication year - 2005

Publication title -

proceedings of the ieee

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 2.383

H-Index - 287

eISSN - 1558-2256

pISSN - 0018-9219

DOI - 10.1109/proc.1963.1969

Subject(s) - general topics for engineers , engineering profession , aerospace , bioengineering , components, circuits, devices and systems , computing and processing , engineered materials, dielectrics and plasmas , fields, waves and electromagnetics , geoscience , nuclear engineering , robotics and control systems , signal processing and analysis , transportation , power, energy and industry applications , communication, networking and broadcast technologies , photonics and electrooptics

Summary form only. An abstract of the above-titled article, taken from the 1963 IEEE International Convention (held March 25-28, New York, NY, USA), is presented.

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