Open AccessA Short Story of the EKV MOS Transistor Model
Author(s) -
Christian C. Enz
Publication year - 2008
Publication title -
ieee solid-state circuits society newsletter
Language(s) - English
Resource type - Journals
ISSN - 1098-4232
DOI - 10.1109/n-ssc.2008.4785778
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
The EKV MOS transistor model and design methodology evolved from the first weak inversion transistor models of the 1970's. In this first-hand account, Christian Enz chronicles the evolution of the hierarchical structure, limited parameters and flexibility of the EKV model that he developed with colleagues such as Francois Krummenacher and Eric Vittoz (the "E" "K" and "V" of EKV) at the Centre Electronique Horloger (CEH) in Neuchatel. With the aggressive downscaling of CMOS technologies today, the EKV compact model is shifting increasingly from the traditional strong inversion region toward moderate and weak inversion regions.