High-Power Sub-300-Femtosecond Quantum Dot Semiconductor Disk Lasers
Author(s) -
Cesare G. E. Alfieri,
Dominik Waldburger,
Matthias Golling,
Ursula Keller
Publication year - 2018
Publication title -
ieee photonics technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.81
H-Index - 157
eISSN - 1941-0174
pISSN - 1041-1135
DOI - 10.1109/lpt.2018.2801024
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
Self-assembled quantum dots (QDs) as active media for ultrafast semiconductor disk laser offer large gain bandwidths, fast gain dynamics, and high temperature stability. We report on the shortest pulses and the highest pulse peak power from an optically pumped vertical external cavity surface emitting laser (VECSEL) based on QDs and optimized for passive modelocking at 1035 nm using a semiconductor saturable absorber mirror. We demonstrate 216-fs pulses with an average output power of 269 mW at a pulse repetition rate of 2.77 GHz and 396 W peak power. At a lower pulse repetition rate of 1.67 GHz, we achieve 193-fs pulses with 112 mW of average output power. We remark a higher optical-to-optical pump efficiency compared to our previous QW VECSELs in the sub-300-fs regime. This is further confirmed by a comparative analysis of the saturation recovery which reveals longer carrier lifetimes for the QD compared to QW VECSELs.
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