Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy | Zendy

J. J. Nowak | Zendy; R. P. Robertazzi | Zendy; J. Z. Sun | Zendy; G. Hu | Zendy; David W. Abraham | Zendy; P. L. Trouilloud | Zendy; S. Brown | Zendy; M. C. Gaidis | Zendy; E. J. O'Sullivan | Zendy; W. J. Gallagher | Zendy; D. C. Worledge | Zendy

Open Access

Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy

Author(s) -

J. J. Nowak,

R. P. Robertazzi,

J. Z. Sun,

G. Hu,

David W. Abraham,

P. L. Trouilloud,

S. Brown,

M. C. Gaidis,

E. J. O'Sullivan,

W. J. Gallagher,

D. C. Worledge

Publication year - 2011

Publication title -

ieee magnetics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.428

H-Index - 23

eISSN - 1949-3088

pISSN - 1949-307X

DOI - 10.1109/lmag.2011.2155625

Subject(s) - fields, waves and electromagnetics

Bit error rates below 10$^{-11}$ are reported for a 4-kb magnetic random access memory chip, which utilizes spin transfer torque writing on magnetic tunnel junctions with perpendicular magnetic anisotropy. Tests were performed at wafer level, and error-free operation was achieved with 10 ns write pulses for all nondefective bits during a 66-h test. Yield in the 4-kb array was limited to 99% by the presence of defective cells. Test results for both a 4-kb array and individual devices are consistent and predict practically error-free operation at room temperature.

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