Open AccessMonolithically Integrated GaN LED/Quasi-Vertical Power U-Shaped Trench-Gate MOSFET Pairs Using Selective Epi Removal
Author(s) -
Zhibo Guo,
Mayank T. Bulsara,
T. Paul Chow,
Collin Hitchcock,
Christian Wetzel,
R. F. Karlicek,
Guanxi Piao,
Yoshiki Yano,
Shuuichi Koseki,
Toshiya Tabuchi,
Koh Matsumoto
Publication year - 2019
Publication title -
ieee electron device letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2019.2943911
Subject(s) - optoelectronics , breakdown voltage , materials science , diode , power mosfet , field effect transistor , transistor , electrical engineering , power (physics) , voltage , light emitting diode , mosfet , physics , engineering , quantum mechanics
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