Monolithic Integration of Self-Biased ${C}$ -Band Circulator on SiC Substrate for GaN MMIC Applications | Zendy

Yongjie Cui | Zendy; Yuepeng Zhang | Zendy; L. Witkowski | Zendy; Soack Dae Yoon | Zendy; S. Pilla | Zendy; Edward Beam | Zendy; Andy Xie | Zendy; Shuoqi Chen | Zendy; A. Ketterson | Zendy; Cathy Lee | Zendy; Yunsong Xie | Zendy; Kai-Zhong Gao | Zendy; John N. Hryn | Zendy; Yu Cao | Zendy

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Monolithic Integration of Self-Biased ${C}$ -Band Circulator on SiC Substrate for GaN MMIC Applications

Author(s) -

Yongjie Cui,

Yuepeng Zhang,

L. Witkowski,

Soack Dae Yoon,

S. Pilla,

Edward Beam,

Andy Xie,

Shuoqi Chen,

A. Ketterson,

Cathy Lee,

Yunsong Xie,

Kai-Zhong Gao,

John N. Hryn,

Yu Cao

Publication year - 2019

Publication title -

ieee electron device letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.337

H-Index - 154

eISSN - 1558-0563

pISSN - 0741-3106

DOI - 10.1109/led.2019.2921090

Subject(s) - monolithic microwave integrated circuit , circulator , materials science , optoelectronics , wide bandgap semiconductor , gallium nitride , substrate (aquarium) , high electron mobility transistor , silicon carbide , electrical engineering , electronic engineering , transistor , nanotechnology , engineering , cmos , amplifier , voltage , oceanography , layer (electronics) , geology , metallurgy

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