Open AccessMonolithic Integration of Self-Biased ${C}$ -Band Circulator on SiC Substrate for GaN MMIC Applications
Author(s) -
Cui Yongjie,
Yuepeng Zhang,
L. Witkowski,
S. D. Yoon,
S. Pilla,
Edward Beam,
Andy Xie,
Shuoqi Chen,
A. Ketterson,
Cathy Lee,
Yuee Xie,
Kai-Zhong Gao,
John N. Hryn,
Yu Cao
Publication year - 2019
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2019.2921090
Subject(s) - monolithic microwave integrated circuit , circulator , materials science , optoelectronics , wide bandgap semiconductor , gallium nitride , substrate (aquarium) , high electron mobility transistor , silicon carbide , electrical engineering , electronic engineering , transistor , nanotechnology , engineering , cmos , amplifier , voltage , oceanography , layer (electronics) , geology , metallurgy