Open Access$\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
Author(s) -
Zhanbo Xia,
Hao Xue,
Chandan Joishi,
Joe F. McGlone,
Nidhin Kurian Kalarickal,
Shahadat H. Sohel,
Mark Brenner,
Aaron R. Arehart,
Steven A. Ringel,
Saurabh Lodha,
Wu Lu,
Siddharth Rajan
Publication year - 2019
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2019.2920366
Subject(s) - transconductance , cutoff frequency , physics , doping , field effect transistor , cutoff , electrical engineering , transistor , optoelectronics , topology (electrical circuits) , voltage , engineering , quantum mechanics
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