Open AccessImproving Post-Cycling Low Resistance State Retention in Resistive RAM With Combined Oxygen Vacancy and Copper Filament
Author(s) -
J. Radhakrishnan,
Attilio Belmonte,
Sergiu Clima,
A. Redolfi,
Michel Houssa,
Gouri Sankar Kar,
Ludovic Goux
Publication year - 2019
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2019.2917553
Subject(s) - copper , protein filament , oxygen , materials science , resistive random access memory , cycling , resistive touchscreen , electrode , diffusion , high resistance , metallurgy , electrical engineering , composite material , chemistry , thermodynamics , physics , agronomy , organic chemistry , archaeology , biology , history , engineering
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