Open AccessReconfigurable Black Phosphorus Vertical Tunneling Field-Effect Transistor With Record High ON-Currents
Author(s) -
Peng Wu,
Joerg Appenzeller
Publication year - 2019
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2019.2909176
Subject(s) - quantum tunnelling , transistor , black phosphorus , field effect transistor , physics , doping , electrical engineering , optoelectronics , mosfet , logic gate , topology (electrical circuits) , voltage , quantum mechanics , engineering