Open AccessImpact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs
Author(s) -
Aditi Agarwal,
Kijeong Han,
B. Jayant Baliga
Publication year - 2019
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2019.2908078
Subject(s) - mosfet , materials science , planar , figure of merit , silicon carbide , optoelectronics , topology (electrical circuits) , power mosfet , electrical engineering , electronic engineering , engineering , transistor , computer science , voltage , composite material , computer graphics (images)