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Monolithic Integration of GaN Nanowire Light-Emitting Diode With Field Effect Transistor
Author(s) -
Matthew Hartensveld,
Jing Zhang
Publication year - 2019
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2019.2895846
Subject(s) - nanowire , light emitting diode , optoelectronics , materials science , gallium nitride , diode , transistor , fabrication , field effect transistor , voltage , nanotechnology , electrical engineering , layer (electronics) , engineering , medicine , alternative medicine , pathology

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