Open AccessThe 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit
Author(s) -
Kijeong Han,
B. Jayant Baliga
Publication year - 2019
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2018.2889221
Subject(s) - topology (electrical circuits) , physics , computer science , materials science , electrical engineering , engineering