Open AccessThe 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit
Author(s) -
Kijeong Han,
B. Jayant Baliga
Publication year - 2018
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2018.2889221
Subject(s) - topology (electrical circuits) , figure of merit , network topology , physics , materials science , computer science , electrical engineering , optoelectronics , engineering , operating system
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