RF Performance of Al 0.85 Ga 0.15 N/Al 0.70 Ga 0.30 N High Electron Mobility Transistors With 80-nm Gates | Zendy

Albert G. Baca | Zendy; Brianna A. Klein | Zendy; Joel R. Wendt | Zendy; Stefan M. Lepkowski | Zendy; Christopher D. Nordquist | Zendy; Andrew M. Armstrong | Zendy; Andrew A. Allerman | Zendy; Erica A. Douglas | Zendy; Robert J. Kaplar | Zendy

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RF Performance of Al 0.85 Ga 0.15 N/Al 0.70 Ga 0.30 N High Electron Mobility Transistors With 80-nm Gates

Author(s) -

Albert G. Baca,

Brianna A. Klein,

Joel R. Wendt,

Stefan M. Lepkowski,

Christopher D. Nordquist,

Andrew M. Armstrong,

Andrew A. Allerman,

Erica A. Douglas,

Robert J. Kaplar

Publication year - 2018

Publication title -

ieee electron device letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.337

H-Index - 154

eISSN - 1558-0563

pISSN - 0741-3106

DOI - 10.1109/led.2018.2880429

Subject(s) - engineered materials, dielectrics and plasmas , components, circuits, devices and systems

Al-rich AlGaN-channel high electron mobility transistors with 80-nm long gates and 85% (70%) Al in the barrier (channel) were evaluated for RF performance. The dc characteristics include a maximum current of 160 mA/mm with a transconductance of 24 mS/mm, limited by source and drain contacts, and an on/off current ratio of $10^{{9}}$ . ${f}_{T}$ of 28.4 GHz and ${f}_{\text {MAX}}$ of 18.5 GHz were determined from small-signal S-parameter measurements. Output power density of 0.38 W/mm was realized at 3 GHz in a power sweep using on-wafer load pull techniques.

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