Open AccessRF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with 80 nm Gates
Author(s) -
Albert G. Baca,
Brianna Klein,
Joel R. Wendt,
Stefan Lepkowski,
Christopher Nordquist,
Andrew M. Armstrong,
Andrew A. Allerman,
Erica Ann Douglas,
Robert Kaplar
Publication year - 2018
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2018.2880429
Subject(s) - transconductance , transistor , electron mobility , optoelectronics , materials science , high electron mobility transistor , electrical engineering , physics , analytical chemistry (journal) , topology (electrical circuits) , chemistry , voltage , engineering , chromatography