Open AccessGe-Doped ${\beta }$ -Ga2O3 MOSFETs
Author(s) -
Neil Moser,
Jonathan McCandless,
Antonio Crespo,
Kevin Leedy,
Andrew Green,
Adam Neal,
Shin Mou,
Elaheh Ahmadi,
James Speck,
Kelson Chabak,
Nathalia Peixoto,
Gregg Jessen
Publication year - 2017
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2017.2697359
Subject(s) - engineered materials, dielectrics and plasmas , components, circuits, devices and systems
We report on MOSFETs fabricated on Ge-doped β-Ga2O3 homoepitaxial material grown by molecular beam epitaxy on (010) Fe-doped semi-insulating substrates. The Ge-doped channel devices performed similar to previously reported devices with Sn- and Si-doped channels with the drain current ON/OFF ratios of >108 and the saturated drain current of >75 mA/mm at VG = 0 V. Hall effect measurements showed a high carrier mobility of 111 cm2/(V·s) with 4 × 1017 cm-3 active carriers. A MOSFET with a gate-drain spacing of 5.5 μm had a three-terminal breakdown voltage of 479 V.