Open Access$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation
Author(s) -
Andrew Joseph Green,
Kelson D. Chabak,
Michele Baldini,
Neil Moser,
Ryan Gilbert,
Robert C. Fitch,
Gunter Wagner,
Zbigniew Galazka,
Jonathan Mccandless,
Antonio Crespo,
Kevin Leedy,
Gregg H. Jessen
Publication year - 2017
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2017.2694805
Subject(s) - engineered materials, dielectrics and plasmas , components, circuits, devices and systems
We demonstrate a β-Ga2O3 MOSFET with record-high transconductance (gm) of 21 mS/mm and extrinsic cutoff frequency (fT) and maximum oscillating frequency (fmax) of 3.3 and 12.9 GHz, respectively, enabled by implementing a new highly doped ohmic cap layer with a sub-micron gate recess process. RF performance was further verified by CW Class-A power measurements with passive source and load tuning at 800 MHz, resulting in POUT, power gain, and power-added efficiency of 0.23 W/mm, 5.1 dB, and 6.3%, respectively. These preliminary results indicate potential for monolithic or heterogeneous integration of power switch and RF devices using β-Ga2O3.