Open AccessBalanced MSM-2DEG Varactors Based on AlGaN/GaN Heterostructure With Cutoff Frequency of 1.54 THz
Author(s) -
Ji Hyun Hwang,
Kye-Jeong Lee,
Sung-Min Hong,
Jae-Hyung Jang
Publication year - 2016
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2016.2628866
Subject(s) - engineered materials, dielectrics and plasmas , components, circuits, devices and systems
AlGaN/GaN high-electron mobility transistor structures were utilized to fabricate metal-semiconductor- metal (MSM) two-dimensional electron gas (2DEG) varactors for application as a terahertz (THz) capacitive switch. By adopting an asymmetric MSM structure composed of nanoscale gates and micron-scale gates, the cutoff frequency of the MSM-2DEG varactors was dramatically improved, up to the THz range, by reducing series resistance. The balanced MSM-2DEG varactor, in which a nanoscale gate is sandwiched between two micron-scale gates exhibited a capacitance switching ratio (Cmax/Cmin) of 2.64, a cutoff frequency of 1.54 THz, and a figure of merit of 4.06 THz.