Open Access600 V/ $1.7~\Omega$ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor
Author(s) -
Ray Li,
Yu Cao,
Mary Chen,
Rongming Chu
Publication year - 2016
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2016.2614515
Subject(s) - engineered materials, dielectrics and plasmas , components, circuits, devices and systems
This letter reports a GaN vertical trench metal-oxide-semiconductor field-effect transistor (MOSFET) with normally-off operation. Selective area regrowth of n±GaN source layer was performed to avoid plasma etch damage to the p-GaN body contact region. A metal-organic-chemicalvapor-deposition (MOCVD) grown AlN/SiN dielectric stack was employed as the gate “oxide”. This unique process yielded a 0.5-mm2-active-area transistor with threshold voltage of 4.8 V, blocking voltage of 600 V at gate bias of 0 V, and on-resistance of 1.7 Ω at gate bias of 10 V.