Open AccessAnalytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)
Author(s) -
Stefano Ambrogio,
Valerio Milo,
ZhongQiang Wang,
Simone Balatti,
Daniele Ielmini
Publication year - 2016
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2016.2600574
Subject(s) - engineered materials, dielectrics and plasmas , components, circuits, devices and systems
Current overshoot due to parasitic capacitance during set transition represents a major concern for controlling the resistance and current consumption in resistive switching memory (RRAM) arrays. In this letter, the impact of current overshoot on the low-resistance state (LRS) is evaluated by means of experiments on one-transistor/one-resistor structures of HfO2 RRAM. We develop a physics-based analytical model, able to calculate the LRS resistance and the corresponding reset current by a closed-form formula. The model allows predicting the current overshoot impact for any value of compliance current, set voltage, and parasitic capacitance.