Open Access3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs
Author(s) -
Andrew J. Green,
Kelson D. Chabak,
Eric R. Heller,
Robert C. Fitch,
Michele Baldini,
Andreas Fiedler,
Klaus Irmscher,
Gunter Wagner,
Zbigniew Galazka,
Stephen E. Tetlak,
Antonio Crespo,
Kevin Leedy,
Gregg H. Jessen
Publication year - 2016
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2016.2568139
Subject(s) - engineered materials, dielectrics and plasmas , components, circuits, devices and systems
A Sn-doped (100) $\beta $ -Ga2O3 epitaxial layer was grown via metal–organic vapor phase epitaxy onto a single-crystal, Mg-doped semi-insulating (100) $\beta $ -Ga2O3 substrate. Ga2O3-based metal–oxide–semiconductor field-effect transistors with a 2- $\mu \text{m}$ gate length ( $L_{G})$ , 3.4- $\mu \text{m}$ source–drain spacing ( $L_{\textrm {SD}})$ , and 0.6- $\mu \text{m}$ gate–drain spacing ( $L_{\textrm {GD}})$ were fabricated and characterized. Devices were observed to hold a gate-to-drain voltage of 230 V in the OFF-state. The gate-to-drain electric field corresponds to 3.8 MV/cm, which is the highest reported for any transistor and surpassing bulk GaN and SiC theoretical limits. Further performance projections are made based on layout, process, and material optimizations to be considered in future iterations.