A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology | Zendy

Raheleh Hedayati | Zendy; Luigia Lanni | Zendy; Saul Rodriguez | Zendy; Bengt Gunnar Malm | Zendy; Ana Rusu | Zendy; Carl-Mikael Zetterling | Zendy

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A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology

Author(s) -

Raheleh Hedayati,

Luigia Lanni,

Saul Rodriguez,

Bengt Gunnar Malm,

Ana Rusu,

Carl-Mikael Zetterling

Publication year - 2014

Publication title -

ieee electron device letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.337

H-Index - 154

eISSN - 1558-0563

pISSN - 0741-3106

DOI - 10.1109/led.2014.2322335

Subject(s) - engineered materials, dielectrics and plasmas , components, circuits, devices and systems

A monolithic bipolar operational amplifier (opamp) fabricated in 4H-SiC technology is presented. The opamp has been used in an inverting negative feedback amplifier configuration. Wide temperature operation of the amplifier is demonstrated from 25 °C to 500 °C. The measured closed loop gain is around 40 dB for all temperatures whereas the 3 dB bandwidth increases from 270 kHz at 25 °C to 410 kHz at 500 °C. The opamp achieves 1.46 V/ \(\mu \) s slew rate and 0.25% total harmonic distortion. This is the first report on high temperature operation of a fully integrated SiC bipolar opamp which demonstrates the feasibility of this technology for high temperature analog integrated circuits.

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