Open AccessDielectric Stacking Effect of $\hbox{Al}_{2} \hbox{O}_{3}$ and $\hbox{HfO}_{2}$
Author(s) -
In-Sung Park,
Kyoung-min Ryu,
Jaehack Jeong,
Jinho Ahn
Publication year - 2012
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2012.2228162
Subject(s) - engineered materials, dielectrics and plasmas , components, circuits, devices and systems
The dielectric stacking effects of Al2O3 and HfO2 thin layers in metal-insulator-metal capacitors are investigated for their leakage current, breakdown voltage, and voltage linearity of the dielectrics. The stacked dielectrics over three layers show the enhancement of dielectric permittivity and voltage linearity of quadratic voltage coefficient compared to one-layer dielectrics. Stacking over five layers attributes to improving leakage current density and breakdown voltage characteristics than three layers.