Open AccessRing-Resonator Based Widely-Tunable Narrow-Linewidth Si/InP Integrated Lasers
Author(s) -
Minh A. Tran,
Duanni Huang,
Joel Guo,
Tin Komljenovic,
Paul A. Morton,
John E. Bowers
Publication year - 2019
Publication title -
ieee journal of selected topics in quantum electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.131
H-Index - 159
eISSN - 1558-4542
pISSN - 1077-260X
DOI - 10.1109/jstqe.2019.2935274
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
This paper presents recent results on widely-tunable narrow-linewidth semiconductor lasers using a ring-resonator based mirror as the extended cavity. Two generations of lasers on the heterogeneous Si/InP photonic platform are presented. The first-generation lasers, with a total footprint smaller than 0.81 mm2, showed an intrinsic linewidth of ~2 kHz over a 40 nm wavelength tuning range across C+L bands. The second-generation lasers using ultra-low loss silicon waveguides and a novel cavity design achieved an intrinsic linewidth below 220 Hz. The lasers also possess an ultrawide wavelength tuning range of 110 nm across three optical communication bands (S+C+L). These are records among all fully integrated semiconductor lasers reported in the literature.