Open AccessHeterogeneous CMOS Photonics Based on SiGe/Ge and III–V Semiconductors Integrated on Si Platform
Author(s) -
Mitsuru Takenaka,
Younghyun Kim,
Jaehoon Han,
Jian Kang,
Yuki Ikku,
Yongpeng Cheng,
Jinkwon Park,
Misa Yoshida,
Seiya Takashima,
Shinich Takagi
Publication year - 2017
Publication title -
ieee journal of selected topics in quantum electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.131
H-Index - 159
eISSN - 1558-4542
pISSN - 1077-260X
DOI - 10.1109/jstqe.2017.2660884
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
The heterogeneous integration of SiGe, Ge, and III-V semiconductors on Si provides many opportunities to develop high-performance photonic integrated circuits through complementary metal oxide semiconductor (CMOS) processes. We found that strained SiGe possesses greater free-carrier effects than Si, contributing to the improved modulation efficiency of Si-based optical modulators. In addition to low-dark-current Ge photodetectors (PDs) with GeO 2 passivation, we investigated Ge CMOS photonics platform for midinfrared wavelengths. We demonstrated Ge passive waveguides and carrier-injection variable optical attenuators (VOAs) on a Ge-on-insulator wafer. We also investigated III-V CMOS photonics platform on a III-V-on-insulator (III-V-OI) wafer. The strong optical confinement in the III-V-OI structure enabled the realization of ultrasmall III-V passive waveguides similarly to those in Si photonics. Carrier-injection InGaAsP optical switches and VOAs as well as InGaAs waveguide PDs were also demonstrated on III-V-OI wafers. We discuss the opportunities and challenges of heterogeneous CMOS photonics technologies to develop high-performance electronic-photonic integrated circuits for near-infrared and midinfrared applications.