Open AccessOptimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates
Author(s) -
Mingchu Tang,
Siming Chen,
Jiang Wu,
Qi Jiang,
Ken Kennedy,
Pamela Jurczak,
Mengya Liao,
Richard Beanland,
Alwyn Seeds,
Huiyun Liu
Publication year - 2016
Publication title -
ieee journal of selected topics in quantum electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.131
H-Index - 159
eISSN - 1558-4542
pISSN - 1077-260X
DOI - 10.1109/jstqe.2016.2551941
Subject(s) - engineered materials, dielectrics and plasmas , photonics and electrooptics
III-V semiconductors monolithically grown on Si substrates are expected to be an ideal solution to integrate highly efficient light-emitting devices on a Si platform. However, the lattice mismatch between III-V and Si generates a high density of threading dislocations (TDs) at the interface between III-V and Si. Some of these TD will propagate into the III-V active region and lead to device degradation. By introducing defect filter layers (DFLs), the density of TDs propagating into the III-V layers can be significantly reduced. In this paper, we present an investigation on the development of InGaAs/GaAs strained-layer superlattices as DFLs for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on a Si substrate. We compare two broad-area InAs/GaAs quantum-dot lasers with non-optimized and optimized InGaAs/GaAs DFLs. The laser device with optimal DFLs has a lower room-temperature threshold current density of 99 A/cm2 and higher maximum operation temperature of 88 °C, compared with 174 A/cm2 and 68 °C for the reference laser.